| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_905122d8678a831c0f8af203f34145dc |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K71-15
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-221
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-466
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-484 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-6715
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y10-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K71-135
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0673
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0665 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-84
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-00 |
| filingDate |
2009-03-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2011-10-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_96eb8f8b1609d2e36d2bdb6021e413e2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_efe26d4aebab0eec0f1804d6cbe1f008
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3672f20326fcb9001baf40756c17d851 |
| publicationDate |
2011-10-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-8030139-B2 |
| titleOfInvention |
Thin film transistor and method of producing thin film transistor |
| abstract |
A method of producing a thin film transistor includes a gate electrode formation step that forms a gate electrode on a substrate, a gate insulating layer formation step that forms a gate insulating layer on the substrate in such a manner as to cover the gate electrode formed in the gate electrode formation step, a source/drain electrodes formation step that forms a source electrode and a drain electrode on the gate insulating layer, and a semiconductor layer formation step that applies an aqueous solution for semiconductor layer formation which is an aqueous solution comprising at least a single wall carbon nanotube and a surfactant between the source electrode and the drain electrode formed in the source/drain electrodes formation step by a coating process to form a semiconductor layer comprising the single wall carbon nanotube. |
| priorityDate |
2007-02-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |