http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8029655-B2

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assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_38cabe784f1ef1b63abdcfd77e5764e2
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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-00
filingDate 2006-07-03-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2011-10-04-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9afcab8b75cd08d1c35230fcba279159
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bb950b4d4f0ebf52c65c70c3ee66ab11
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publicationDate 2011-10-04-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-8029655-B2
titleOfInvention Sputtering target, method for producing same, sputtering thin film formed by using such sputtering target, and organic EL device using such thin film
abstract Provided is a sputtering target which can give a high water barrier property and a high flexibility to a sputtering film, can keep a high film forming rate certainly in sputtering, and can make damages to an objective substance wherein a film is to be formed as small as possible. In order to realize this, a mixed powder which contains 20 to 80% by weight of a SiO powder, the balance of the powder being made of a TiO 2 powder and/or a Ti powder, is pressed and sintered. The sintered body has a composition of SiαTiβOγ wherein α, β and γ are mole ratios of Si, Ti and O, respectively, and the ratio of α/β ranges from 0.45 to 7.25 and the ratio of γ/(α+β) ranges from 0.80 to 1.70.
priorityDate 2005-07-27-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 28.