| abstract |
An organic field effect transistor comprising a gate electrode 2 , a gate insulating layer 3 , a semiconductor layer 4 , a source electrode 7 , and a drain electrode 8 , wherein the source electrode 7 and the drain electrode 8 are composed of conductive layers 6 and 6 ′, and compound layers 5 and 5 ′ comprising an acceptor compound, respectively, wherein the compound layers 5 and 5 ′ are each located in contact with the semiconductor layer 4 , and wherein the semiconductor layer 4 contains a polymer compound having an ionization potential of 5.0 eV or more. |