http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8008691-B2
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_75b765b53e6651e9863a3a35e4c1e164 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-2003 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-772 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N27-414 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01N27-403 |
| filingDate | 2009-07-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2011-08-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_412b677d0bc762ef9c94e1f002f22a2e http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_735511485a996d7c9f3f9fc7465a514a |
| publicationDate | 2011-08-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | US-8008691-B2 |
| titleOfInvention | Ion sensitive field effect transistor and production method thereof |
| abstract | The present invention discloses an ion sensitive field effect transistor, comprising: a GaN/sapphire layer, used as a substrate; an a-InN:Mg epilayer, deposited on the GaN/sapphire layer, used to provide a current path; a first metal contact, deposited on the a-InN:Mg epilayer to provide drain contact; and a second metal contact, deposited on the a-InN:Mg epilayer to provide source contact; and a patterned insulating layer, used to cover the first metal contact, the second metal contact and the a-InN:Mg epilayer, wherein the patterned insulating layer has a contact window defining an exposure area of the a-InN:Mg epilayer. |
| priorityDate | 2009-07-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 20.