Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_7b94d2715cda37c1f23e48f9f4f23422 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01T3-08 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01T3-08 |
filingDate |
2011-01-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2011-08-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_80565e08d3fc274b647d5d0a86563af7 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_73e78bdbd0dc772b37570fcbbe1dd689 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4c50b5a54d8b8b4e885ac1b6dbf994c6 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8e5e61bce760e0399f9dcae5f3b53284 |
publicationDate |
2011-08-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-8008626-B2 |
titleOfInvention |
Neutron detector with gamma ray isolation |
abstract |
A silicon-on-insulator (SOI) neutron detector comprising a silicon-on-insulator structure, wherein the silicon-on-insulator structure consists of an active semiconductor layer, a buried layer, and a handle substrate, a lateral carrier transport and collection detector structure within the active semiconductor layer of the silicon-on-insulator structure, and a neutron to high energy particle converter layer on the active semiconductor layer. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011049379-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10446644-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8624195-B2 |
priorityDate |
2008-03-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |