Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fdad00677b9268c26e005a9e03a7b9dd |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-13091 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B41-49 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823462 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823481 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-105 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76229 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 |
filingDate |
2009-06-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2011-08-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_08306c2d541ce7bb0ac26eecceda4fb0 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_09d93569b9d3314fd2d12e01a7404ef3 |
publicationDate |
2011-08-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-7994587-B2 |
titleOfInvention |
Semiconductor device and semiconductor device manufacturing method |
abstract |
A semiconductor device includes a plurality of first MOS transistors has a first gate electrode formed on a first gate insulating film provided on a semiconductor substrate, a plurality of second MOS transistors has a second gate electrode formed on a second gate insulating film which is provided on the substrate and which is smaller in thickness than the first gate insulating film. A first element isolation region has a first region and a second region, a bottom surface of the second region is deeper than that of the first region by the difference of thickness between the first gate insulating film and the second gate insulating film, and a bottom surface of the first region is equal in a bottom surface of a second element isolation region. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9070743-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011073933-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9006812-B2 |
priorityDate |
2008-08-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |