| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f62da6517ec38a06ef3d6699484ef15e |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C18-1258
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02628
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C18-1283
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C18-1204
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C18-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C18-1295
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02568
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67207
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C18-1291 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-06 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-16 |
| filingDate |
2009-07-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2011-07-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4881f9895e0046b565a73bb6bfb4d79c |
| publicationDate |
2011-07-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-7972899-B2 |
| titleOfInvention |
Method for fabricating copper-containing ternary and quaternary chalcogenide thin films |
| abstract |
An apparatus for depositing a solid film onto a substrate from a reagent solution includes reservoirs of reagent solutions maintained at a sufficiently low temperature to inhibit homogeneous reactions within the reagent solutions. The chilled solutions are dispensed through showerheads, one at a time, onto a substrate. One of the showerheads includes a nebulizer so that the reagent solution is delivered as a fine mist, whereas the other showerhead delivers reagent as a flowing stream. A heater disposed beneath the substrate maintains the substrate at an elevated temperature at which the deposition of a desired solid phase from the reagent solutions may be initiated. Each reagent solution contains at least one metal and either S or Se, or both. At least one of the reagent solutions contains Cu. The apparatus and its associated method of use are particularly suited to forming films of Cu-containing compound semiconductors. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8610129-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9666870-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11581612-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2012056192-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11450926-B2 |
| priorityDate |
2009-07-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |