| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d380ea394238f732e0ab98fa00bad429 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-52
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-535
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-528
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41758
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0207
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4238
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0696
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7816 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-52
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-118
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-105
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088 |
| filingDate |
2006-06-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2011-06-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_49d28c6d85d1103db070c86d66ca65aa |
| publicationDate |
2011-06-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-7956384-B2 |
| titleOfInvention |
Closed cell configuration to increase channel density for sub-micron planar semiconductor power device |
| abstract |
A semiconductor power device supported on a semiconductor substrate that includes a plurality of transistor cells, each cell has a source and a drain region disposed on opposite sides of a gate region in the semiconductor substrate. A gate electrode is formed as an electrode layer on top of the gate region for controlling an electric current transmitted between the source and the drain regions. The gate electrode layer disposed on top of the semiconductor substrate is patterned into a wave-like shaped stripes for substantially increasing an electric current conduction area between the source and drain regions across the gate. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8561004-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2013221437-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9337284-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011186930-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8836029-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10388784-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8937351-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10121668-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10014321-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9941159-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9449919-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I619253-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2016133645-A1 |
| priorityDate |
2006-06-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |