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grantDate 2011-06-07-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_19d45c612a682681cb94fb6e92b8371e
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publicationDate 2011-06-07-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-7955869-B2
titleOfInvention Nonvolatile memory devices and methods of fabricating the same
abstract Nonvolatile memory devices and methods of fabricating the same are provided. In some embodiments, a nonvolatile memory device includes a lower conductive member formed on an upper part of or inside a substrate, a ferroelectric organic layer formed on the lower conductive member, a protective layer formed on the ferroelectric organic layer, and an upper conductive member formed on the protective layer to cross the lower conductive member.
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