http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7955449-B2

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filingDate 2008-07-17-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2011-06-07-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3e67576a7fa4fa7e4d54816bf6c347ed
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publicationDate 2011-06-07-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-7955449-B2
titleOfInvention Process for inducing a two-way shape memory effect in a device formed of a shape memory alloy and a device made by the process
abstract A process for inducing a two-way shape memory effect in a device forward of a shape memory alloy and a device made by the process are disclosed. The two-way memory effect occurs in the device in a temperature range of between about 5° C. to 25° C. wherein the training process is based on B2 R phrase transformations. An R-phase formation or reorientation takes place in the device under stress whereupon the R-phase transforms into stress induced martenite. The device is subjected to thermocycling.
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