| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G09G2300-0408 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02532
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-045
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1277
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02672
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66757
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1296 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-84
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-77 |
| filingDate |
2008-06-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2011-05-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0f128d9c2440afff71001e59f763b9ed
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_068be48c4391e3965978f32f6e0fe962
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9c35fd66ee8ee6c337095b2c839af84a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b845fe348f5a6f7fc3b0befeeba9a733
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_402c106dc49f294241ff10bf458d5d0e |
| publicationDate |
2011-05-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-7943930-B2 |
| titleOfInvention |
Semiconductor device forming method |
| abstract |
In thin film transistors (TFTs) having an active layer of crystalline silicon adapted for mass production, a catalytic element is introduced into doped regions of an amorphous silicon film by ion implantation or other means. This film is crystallized at a temperature below the strain point of the glass substrate. Further, a gate insulating film and a gate electrode are formed. Impurities are introduced by a self-aligning process. Then, the laminate is annealed below the strain point of the substrate to activate the dopant impurities. On the other hand, Neckel or other element is also used as a catalytic element for promoting crystallization of an amorphous silicon film. First, this catalytic element is applied in contact with the surface of the amorphous silicon film. The film is heated at 450 to 650° C. to create crystal nuclei. The film is further heated at a higher temperature to grow the crystal grains. In this way, a crystalline silicon film having improved crystallinity is formed. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8436359-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9331108-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9941310-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9257452-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9939692-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9202827-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9917116-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9177969-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9659977-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010163874-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9494830-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8981374-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9443888-B2 |
| priorityDate |
1993-03-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |