| abstract |
A data memorization device including at least: a stack of layers including at least one memory layer based on a phase change material arranged between at least two insulating layers, placed on a substrate, a plurality of columns arranged in the stack of layers, and passing through each layer of the stack, each of the columns being based on at least one electrically conducting material, and a plurality of memorization elements formed by annular portions of the at least one memory layer surrounding columns. |