http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7939407-B2
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b809e16fc8e6cf409abc8b3376cda1d2 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7881 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B41-30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42324 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
| filingDate | 2009-11-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2011-05-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_720cd50a0e114b00cc73f61049980feb http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9022e2adffd11b29a3a9edf18fec030d http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_28adf2b2533ec8c6c8eef53b84607166 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_aeecade52e38fdda12ec4ab899a68b0e |
| publicationDate | 2011-05-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | US-7939407-B2 |
| titleOfInvention | Composite charge storage structure formation in non-volatile memory using etch stop technologies |
| abstract | Semiconductor-based non-volatile memory that includes memory cells with composite charge storage elements is fabricated using an etch stop layer during formation of at least a portion of the storage element. One composite charge storage element suitable for memory applications includes a first charge storage region having a larger gate length or dimension in a column direction than a second charge storage region. While not required, the different regions can be formed of the same or similar materials, such as polysilicon. Etching a second charge storage layer selectively with respect to a first charge storage layer can be performed using an interleaving etch-stop layer. The first charge storage layer is protected from overetching or damage during etching of the second charge storage layer. Consistency in the dimensions of the individual memory cells can be increased. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10410864-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2013059401-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9991118-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8658504-B2 |
| priorityDate | 2007-12-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 36.