| abstract |
A thin film transistor device includes a semiconductor layer. The semiconductor layer includes a compound comprising a chemical structure represented by: n n n n n n n n n n n n wherein each R is independently selected from hydrogen, an optionally substituted hydrocarbon, and a hetero-containing group, n each Ar is independently selected from optionally substituted aryl and heteroaryl groups, n each M is an optional, conjugated moiety, n a represents a number that is at least 1, n b represents a number from 0 to 20, and n n represents a number that is at least 1. |