http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7907449-B2

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assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b809e16fc8e6cf409abc8b3376cda1d2
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C16-16
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C11-5635
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C16-06
filingDate 2009-04-09-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2011-03-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8da1ac1823768b808af4b6a88a010f0f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fae89a8904582f09ff789720e765351e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7ef7e6a629afda82409fbde0c4160c26
publicationDate 2011-03-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-7907449-B2
titleOfInvention Two pass erase for non-volatile storage
abstract Techniques are disclosed herein for erasing non-volatile memory cells. The memory cells are erased using a trial erase pulse. A suitable magnitude for a second pulse is determined based on the magnitude of the trial erase pulse and data collected about the threshold voltage distribution after the trial erase. The second erase pulse is used to erase the memory cells. In one implementation, the threshold voltages of the memory cells are not verified after the second erase. Soft programming after the second erase may be performed. The magnitude of the soft programming pulse may be determined based on the trial erase pulse. In one implementation, the memory cells'threshold voltages are not verified after the soft programming. Limiting the number of erase pulses and soft programming pulses saves time and power. Determining an appropriate magnitude for the second erase pulse minimizes or eliminates over-erasing.
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priorityDate 2009-04-09-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 49.