patent/US-7902089-B2

http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7902089-B2

Outgoing Links

Predicate	Object
assignee	http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_9019c0ce5cb7b82c85e121f6cac86dce
classificationCPCAdditional	http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78681 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y10-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-221 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869
classificationCPCInventive	http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4908 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y10-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0673 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0665 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-484 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02271 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3185 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78696 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0217 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K71-30
classificationIPCInventive	http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302
filingDate	2006-02-10-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate	2011-03-08-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor	http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_38b6a251e577d8ca76796183fd3ebbf7 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_54624c1f905fd4cd133a86f0c13bfbe3 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9a0333010f6247db2e1a0c1e35d239ad
publicationDate	2011-03-08-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber	US-7902089-B2
titleOfInvention	N-type transistor, production methods for n-type transistor and n-type transistor-use channel, and production method of nanotube structure exhibiting n-type semiconductor-like characteristics
abstract	An object of the present invention is to provide a new n-type transistor, different from the prior art, using a channel having a nanotube-shaped structure, and having n-type semiconductive properties. To realize this, a film of a nitrogenous compound 6 is formed directly on a channel 5 of a transistor 1 comprising a source electrode 2 , a drain electrode 3 , a gate electrode 4 and the n-type channel 5 having a nanotube-shaped structure and provided between the source electrode 2 and the drain electrode 3.
isCitedBy	http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11121335-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10094801-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8368123-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9972800-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011147802-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8148229-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11545641-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10381586-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010279457-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9689835-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10520467-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10367158-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9791406-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9910009-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2017125709-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11486854-B2
priorityDate	2005-02-10-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type	http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

Predicate	Subject
isCitedBy	http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2002016084-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2002012937-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2004238887-A1
isDiscussedBy	http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID128493669 http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID589711 http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID128585769 http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID6398 http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID123530809 http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID135926496

Total number of triples: 52.