| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ae372ddaa494f2face39592b0429cc16 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-472
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-466 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C07D513-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-113
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-472
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-484
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-466
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-657 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L35-24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-08 |
| filingDate |
2008-12-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2011-03-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9712117ce50a859c751f41d75af38062
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_95529deb293d387ed8cdf1a39fb5cb8f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c1b3d4fc72200723e7403c741bcd1354
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4ebea2597e27f0329ab3fdee28056a9b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_17a061931430bab67e75c8638fa217bf
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c59373f600dca5bc9c2aa88942544890 |
| publicationDate |
2011-03-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-7897963-B2 |
| titleOfInvention |
Thiazole-based semiconductor compound and organic thin film transistor using the same |
| abstract |
Provided are an organic semiconductor compound using thiazole, and an organic thin film transistor having an organic semiconductor layer formed of the organic semiconductor compound using thiazole. The novel organic semiconductor compound including thiazole has liquid crystallinity and excellent thermal stability, and thus is provided to form an organic semiconductor layer in the organic thin film transistor. To this end, a silicon oxide layer is formed on a silicon substrate, and an organic semiconductor layer including thiazole is formed on the silicon oxide layer. In addition, source and drain electrodes are formed on both edge portions of the organic semiconductor layer. The organic thin film transistor using the organic semiconductor layer has an improved on/off ratio and excellent thermal stability. Also, a solution process can be applied in its manufacture. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8164089-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011084252-A1 |
| priorityDate |
2007-11-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |