| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66181
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-84
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-0387 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-94 |
| filingDate |
2008-01-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2011-02-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_765e15ba57280d4078e3181c3cb39eed
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b1241cb6a05bfb166da6f0735e3fe22d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c73be318cb6a576438713cc787ae88cc
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9109b68b55594387713c374f294c46cb
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0b9f06a0e3d55b3dee2158aa2e84d441 |
| publicationDate |
2011-02-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-7888723-B2 |
| titleOfInvention |
Deep trench capacitor in a SOI substrate having a laterally protruding buried strap |
| abstract |
A deep trench is formed to a depth midway into a buried insulator layer of a semiconductor-on-insulator (SOI) substrate. A top semiconductor layer is laterally recessed by an isotropic etch that is selective to the buried insulator layer. The deep trench is then etched below a bottom surface of the buried insulator layer. Ion implantation is performed at an angle into the deep trench to dope the sidewalls of the deep trench beneath the buried insulator layer, while the laterally recessed sidewalls of the top semiconductor layer are not implanted with dopant ions. A node dielectric and trench fill materials are deposited into the deep trench. A buried strap has an upper buried strap sidewall that is offset from a lower buried strap sidewall and a deep trench sidewall. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8642423-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9379177-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8936992-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9048339-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8846470-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9287272-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8507915-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8723243-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9059322-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10818668-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8809994-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9224797-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9583497-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8946045-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9029862-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9899391-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2014035038-A1 |
| priorityDate |
2008-01-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |