http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7888682-B2

Outgoing Links

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assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_33cf281df1fdf76b7da1bb88a75ba80d
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41733
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66757
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-417
filingDate 2008-12-11-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2011-02-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_18ce49b5196d80e26bb66d458e2c9dd8
publicationDate 2011-02-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-7888682-B2
titleOfInvention Thin film transistor and method of manufacturing the same
abstract A thin film transistor comprises a substrate; a semiconductor layer disposed on the substrate, the semiconductor layer having a source region, a drain region, and a channel region between the source region and the drain region; a gate insulating layer disposed on the semiconductor layer and on the substrate; a gate electrode disposed on the insulating layer over the channel region; an passivation layer disposed on the gate electrode and the gate insulating layer; a source electrode disposed in contact with upper, lower and side surfaces of the source region via a first contact hole through passivation layer, the gate insulating layer and the semiconductor layer; and a drain electrode disposed in contact with upper, lower and side surfaces of the drain region via a second contact hole through the passivation layer, the gate insulating layer and the semiconductor layer.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11462574-B2
priorityDate 2008-07-08-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

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Total number of triples: 19.