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filingDate 2008-05-20-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2011-02-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d968d5151ead641f84ef4f4ad141b137
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publicationDate 2011-02-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-7888591-B2
titleOfInvention Silicon-based photovoltaic cell and its red light conversion layer
abstract A silicon-based photovoltaic cell is disclosed having a red light conversion layer that absorbs ultraviolet rays, blue-purple or yellow-green light of the Sun's solar radiation and converts the absorption into a red, dark red and near infrared subband radiation. The maximum value of the solar radiation absorbed by the red light conversion layer is λ=470˜490 nm, and the maximum value of the photoluminescent spectrum of the red light conversion layer is within the photosensitive spectral zone of said single-crystal silicon substrate λ=700˜900 nm, i.e., in conformity with the optimal sensitivity area of silicon-based solar cells. The red light conversion layer has filled therein an ethyl acetoacetate or polycarbonate-based light-transmissive polymer that has evenly distributed therein a phosphor composed of α-Al 2 O 3 —Ti 2 O 3 , having a quantum efficiency of 90%.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8860165-B2
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priorityDate 2007-05-23-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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Total number of triples: 39.