| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_063a1b324005ddc15e16e7529c6258c4 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0217
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45546
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31645
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-405
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45504
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31608
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3185
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3141
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02181 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-40 |
| filingDate |
2007-07-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2011-02-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_83599014e1cc11ef0347e4c7fd91937f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1628a712add51b2da6bab80c6db0b1a9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_98815e0444a9c21f1c253c6d84d9943e |
| publicationDate |
2011-02-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-7883746-B2 |
| titleOfInvention |
Insulating film formation method which exhibits improved thickness uniformity and improved composition uniformity |
| abstract |
In an insulating film formation method, a cycle A in which O 3 at a low flow rate is supplied onto a substrate and then O 3 supplied is allowed to react with Hf on the substrate in a non-equilibrium state to form a hafnium oxide film is carried out M times (M≧1), and a cycle B in which O 3 at a high flow rate is supplied onto the substrate and then O 3 supplied is allowed to react with Hf on the substrate in an equilibrium state to form a hafnium oxide film is carried out N times (N≧1). These insulating film formation cycles are defined as one sequence. This sequence is repeated until a desired thickness is obtained, thereby forming a target insulating film. |
| priorityDate |
2006-07-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |