Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947 |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-00014 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2221-68381 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-09701 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2221-6834 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2221-68327 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-83191 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2221-68318 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-0554 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01057 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-27436 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-05573 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-05568 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-16 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-6835 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-6836 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-30 |
filingDate |
2008-12-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2011-01-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2c56c203a9142111458cc3f5de591e5e http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ddd84540c9217b8dc15cbb278f4debd4 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b4201208e18b470d4c3791ff5ca6b168 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a1b378c8771760d2592e39d6ee6cdd54 |
publicationDate |
2011-01-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-7867876-B2 |
titleOfInvention |
Method of thinning a semiconductor substrate |
abstract |
A C4 grind tape and a laser-ablative adhesive layer are formed on a front side of a semiconductor substrate. A carrier substrate is thereafter attached to the laser-ablative adhesive layer. The back side of the semiconductor substrate is thinned by polishing or grinding, during which the carrier substrate provides mechanical support to enable thinning of the semiconductor substrate to a thickness of about 25 μm. A film frame tape is attached to the back side of the thinned semiconductor substrate and the laser-ablative adhesive layer is ablated by laser, thereby dissociating the carrier substrate from the back side of the C4 grind tape. The assembly of the film frame tape, the thinned semiconductor substrate, and the C4 grind tape is diced. The C4 grind tape is irradiated by ultraviolet light to become less adhesive, and is subsequently removed. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9601364-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9171749-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2012329249-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2016133501-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9006081-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9076701-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9748131-B2 |
priorityDate |
2008-12-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |