| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1af8df51ce24ca931ae718fb747f6aa0 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-466
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-311
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C07D487-22 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-05
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C07D487-22
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-30 |
| filingDate |
2004-08-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2011-01-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5a883ecde8eff8ba06014bd8f41b59ec
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_66ff05c31f1c76cd35d391c8ff65aea9 |
| publicationDate |
2011-01-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-7863081-B2 |
| titleOfInvention |
Field effect transistor and method of manufacturing the same |
| abstract |
Provided is a field effect transistor having an organic semiconductor layer, in which crystal grains having a maximum diameter of 10 μm or more account for 25% or more of the surface area of the organic semiconductor layer. The organic semiconductor layer preferably contains 7 to 200 crystal grains having a maximum diameter of 10 μm or more per 0.01 mm 2 . The organic semiconductor layer preferably contains a porphyrin crystal. |
| priorityDate |
2003-08-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |