Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c16d2144a81bfa32a665dca1e93c3d37 |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-26586 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1083 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G08G1-096 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0653 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66545 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G08G1-095 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66636 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66628 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41775 |
classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-265 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-10 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-417 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-739 |
filingDate |
2008-06-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2010-12-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_732cfd96fc57c94cdfb3044df100fba3 |
publicationDate |
2010-12-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-7858457-B2 |
titleOfInvention |
Methods of forming integrated circuit devices including a depletion barrier layer at source/drain regions |
abstract |
Integrated circuit devices include an integrated circuit substrate having a channel region therein. A gate pattern is disposed on a top surface of the channel region. A depletion barrier layer covers a surface of the integrated circuit substrate adjacent opposite sides of the gate pattern and extending along a portion of a lateral face of the channel region. A source/drain layer is disposed on the depletion barrier layer and electrically contacting the lateral face of the channel region in a region not covered by the depletion barrier layer. The channel region may protrude from a surface of the substrate. The depletion barrier layer may be an L-shaped depletion barrier layer and the device may further include a device isolation layer disposed at a predetermined portion of the substrate through the source/drain layer and the depletion barrier layer. The depletion barrier layer and the device isolation layer may be formed of the same material. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10904333-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10601943-B2 |
priorityDate |
2003-02-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |