| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_adf225ca4a6bf6190b6a2763410d1ebf |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C25D5-611
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C25D5-617
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76898
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C25D5-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C25D7-123
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2885
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C25D17-001
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C25D7-04 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C25D21-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C25D5-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C25D5-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C25D5-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-288 |
| filingDate |
2006-11-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2010-12-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2320c0bfb669f3758d0e734930e48f95
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ed825f4a0ac082b239fe93e5bc4da9d9 |
| publicationDate |
2010-12-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-7850836-B2 |
| titleOfInvention |
Method of electro-depositing a conductive material in at least one through-hole via of a semiconductor substrate |
| abstract |
An initial pulse current cycle is supplied to at least one through-hole via. The pulse current cycle includes a forward pulse current. The magnitude of the forward pulse current is lower than the magnitude of the reverse pulse current. A corresponding forward and reverse current density is generated across the via causing conductive material to be deposited within the via, thereby reducing the effective aspect ratio of the via. At least one subsequent pulse current cycle is supplied. The magnitudes of the forward and reverse pulse currents of the subsequent pulse current cycle are determined in relation to the reduced effective aspect ratio. A subsequent corresponding forward and reverse current density is generated across the through-hole via causing conductive material to be deposited within the via, thereby further reducing the effective aspect ratio of the via. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9023227-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2013313121-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9991161-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8877632-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-102012106892-B4
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9583365-B2 |
| priorityDate |
2005-11-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |