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filingDate 2004-08-18-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2010-12-07-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b81668511a947034a03a71a9c152dc06
publicationDate 2010-12-07-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-7846647-B2
titleOfInvention Method of producing pattern-formed structure and photomask used in the same
abstract The present invention discloses a method of producing a pattern-formed structure, comprising the processes of: preparing a substrate for a pattern-formed structure having a characteristic-modifiable layer whose characteristic at a surface thereof can be modified by the action of photocatalyst; preparing a photocatalyst-containing-layer side substrate having a photocatalyst-containing layer formed on a base material, the photocatalyst-containing layer containing photocatalyst; arranging the substrate for a pattern-formed structure and the photocatalyst-containing-layer side substrate such that the characteristic-modifiable layer faces the photocatalyst-containing layer with a clearance of no larger than 200 μm therebetween; and irradiating energy to the characteristic-modifiable layer from a predetermined direction, and modifying characteristic of a surface of the characteristic-modifiable layer, thereby forming a pattern at the characteristic-modifiable layer. According to this method, a highly precise pattern can be formed without necessity to carry out any post-treatment after exposure. Further, there is no concern that the pattern-formed structure itself deteriorates because the produced pattern-formed structure is free of the photocatalyst.
priorityDate 2001-03-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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