http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7846647-B2
Outgoing Links
Predicate | Object |
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assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_669c01133740c5233f2c8738904ea3af |
classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S430-148 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y30-00 |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F1-38 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-11 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F1-62 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-2014 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0007 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-001 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y30-00 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-26 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-11 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B41C1-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F1-00 |
filingDate | 2004-08-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate | 2010-12-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b81668511a947034a03a71a9c152dc06 |
publicationDate | 2010-12-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | US-7846647-B2 |
titleOfInvention | Method of producing pattern-formed structure and photomask used in the same |
abstract | The present invention discloses a method of producing a pattern-formed structure, comprising the processes of: preparing a substrate for a pattern-formed structure having a characteristic-modifiable layer whose characteristic at a surface thereof can be modified by the action of photocatalyst; preparing a photocatalyst-containing-layer side substrate having a photocatalyst-containing layer formed on a base material, the photocatalyst-containing layer containing photocatalyst; arranging the substrate for a pattern-formed structure and the photocatalyst-containing-layer side substrate such that the characteristic-modifiable layer faces the photocatalyst-containing layer with a clearance of no larger than 200 μm therebetween; and irradiating energy to the characteristic-modifiable layer from a predetermined direction, and modifying characteristic of a surface of the characteristic-modifiable layer, thereby forming a pattern at the characteristic-modifiable layer. According to this method, a highly precise pattern can be formed without necessity to carry out any post-treatment after exposure. Further, there is no concern that the pattern-formed structure itself deteriorates because the produced pattern-formed structure is free of the photocatalyst. |
priorityDate | 2001-03-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 50.