| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e5db580deca7130dbe51805c6c608b35 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76873
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76816
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-7684
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3212 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C03C15-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-461
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B24B1-00 |
| filingDate |
2008-01-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2010-11-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_440ba35e6186199c84ea4c486cd656ca
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1caff2f7e78fbc0ab7650199ec048b53
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_be056f4bad25717783bc2f6f88551abe |
| publicationDate |
2010-11-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-7842614-B2 |
| titleOfInvention |
Method for manufacturing semiconductor device and polisher used in the method for manufacturing semiconductor device |
| abstract |
A method for manufacturing a semiconductor device, including depositing an interconnect material including Cu or Cu alloy over an insulating film, and polishing the interconnect material by CMP with a polishing liquid, wherein the oxidation-reduction potential (ORP) of the polishing liquid is controlled so as to be in the range of 400 mV to 700 mV vs. Ag/AgCl. |
| priorityDate |
2007-01-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |