| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_a0f26a9c2efad3ae086a108f3c04b57d |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-665
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1203 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66659
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823807
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823878
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823892
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1045
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7835 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-02 |
| filingDate |
2007-10-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2010-11-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3f5417b477b92a2c171378ba5218565a |
| publicationDate |
2010-11-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-7838930-B1 |
| titleOfInvention |
Insulated-gate field-effect transistor with hypoabrupt step change in body dopant concentration below source/drain zone |
| abstract |
An insulated-gate field-effect transistor ( 500, 510, 530, or 540 ) has a hypoabrupt step-change vertical dopant profile below one ( 104 or 564 ) of its source/drain zones for reducing the parasitic capacitance along the pn junction between that source/drain zone and adjoining body material ( 108 or 568 ). In particular, the concentration of semiconductor dopant which defines the conductivity type of the body material largely undergoes a step increase by at least a factor of 10 in moving from that source/drain zone down to an underlying body-material location no more than 10 times deeper below the upper semiconductor surface than that source/drain zone. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2009250789-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8148777-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8610207-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8035196-B2 |
| priorityDate |
2005-08-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |