| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_81cfb88d909c75104c0c8d61799a72b0 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T29-49117
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28556 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45525
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45553
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-44
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C07F19-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C07F9-005
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C07F9-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C07C211-65
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-34
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-405 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-34
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C07F9-00 |
| filingDate |
2010-05-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2010-11-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_502adc95ab64f293058d115cd448901d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_408c5c237358db939f26cc511c4b1005
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_372c901369214e393dd655ef20a09b73 |
| publicationDate |
2010-11-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-7838073-B2 |
| titleOfInvention |
Tantalum amide complexes for depositing tantalum-containing films, and method of making same |
| abstract |
Tantalum precursors useful in depositing tantalum nitride or tantalum oxides materials on substrates, by processes such as chemical vapor deposition and atomic layer deposition. The precursors are useful in forming tantalum-based diffusion barrier layers on microelectronic device structures featuring copper metallization and/or ferroelectric thin films. |
| priorityDate |
2003-10-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |