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filingDate 2004-09-23-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2010-11-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-7833896-B2
titleOfInvention Aluminum cap for reducing scratch and wire-bond bridging of bond pads
abstract A method of manufacturing a semiconductor device and structure thereof. The method includes providing a workpiece, the workpiece having at least one conductive pad partially exposed through an opening in a passivation layer, the passivation layer having a top surface and the opening in the passivation layer having sidewalls. A barrier layer is formed over the at least one conductive pad, wherein the barrier layer lines the sidewalls of the opening in the passivation layer and is disposed over a top portion of the passivation layer proximate the opening. A conductive cap is formed over the barrier layer within the opening in the passivation layer, and the conductive cap is recessed to a height below the top surface of the passivation layer. The conductive cap may be used for testing with a probe or may be used for wire-bonding.
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