http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7821052-B2
Outgoing Links
Predicate | Object |
---|---|
assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c3a2f00e72ba6e4c09b6da573427fbed |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76897 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31111 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31144 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-31 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-482 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8242 |
filingDate | 2008-03-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate | 2010-10-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7a93a75310b4ac245ac7f56d1b5fcda5 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3f1b53a1adf6f9a9298acecec05db8cd |
publicationDate | 2010-10-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | US-7821052-B2 |
titleOfInvention | Method for forming a buried digit line with self aligning spacing layer and contact plugs during the formation of a semiconductor device, semiconductor devices, and systems including same |
abstract | A method for use during fabrication of a semiconductor device comprises the formation of buried digit lines and contacts. During formation, a buried bit line layer may be used as a mask to etch one or more openings in a dielectric layer. A conductive layer is then formed in the one or more openings in the dielectric layer, and is then planarized to form one or more individual contact plugs. Next, the buried bit line layer is etched to recess the buried bit line layer, and a capacitor plate is formed to contact the contact plug. |
priorityDate | 2005-08-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 43.