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filingDate 2008-03-20-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2010-10-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2010-10-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-7821052-B2
titleOfInvention Method for forming a buried digit line with self aligning spacing layer and contact plugs during the formation of a semiconductor device, semiconductor devices, and systems including same
abstract A method for use during fabrication of a semiconductor device comprises the formation of buried digit lines and contacts. During formation, a buried bit line layer may be used as a mask to etch one or more openings in a dielectric layer. A conductive layer is then formed in the one or more openings in the dielectric layer, and is then planarized to form one or more individual contact plugs. Next, the buried bit line layer is etched to recess the buried bit line layer, and a capacitor plate is formed to contact the contact plug.
priorityDate 2005-08-22-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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