| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bce787970b69aeb08d159e7c101c9ed7 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76868
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2885
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-288
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76873
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76846 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C25D5-34 |
| filingDate |
2006-04-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2010-10-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_46f5da2fba7a161f1e4bc5481e3724a6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cc312dd12a75c135dd290e636a44936f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9d8cd3a7e6503704a1c01b969a34a1a3 |
| publicationDate |
2010-10-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-7820026-B2 |
| titleOfInvention |
Method to deposit organic grafted film on barrier layer |
| abstract |
Generally, the process includes depositing a barrier layer on a feature formed in a dielectric layer, decorating the barrier layer with a metal, performing a grafting process, initiating a copper layer and then filing the feature by use of a bulk copper fill process. Copper features formed according to aspects described herein have desirable adhesion properties to a barrier layer formed on a semiconductor substrate and demonstrate enhanced electromigration and stress migration results in the fabricated devices formed on the substrate. |
| priorityDate |
2005-04-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |