| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_88fc7f9eb617072238851d46591a0c76 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0207
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6656 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7833
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7843
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-092
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823807
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823412 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-108 |
| filingDate |
2007-05-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2010-09-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e1a3dcc45bb94874a20c111278734aed |
| publicationDate |
2010-09-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-7800150-B2 |
| titleOfInvention |
Semiconductor device |
| abstract |
A semiconductor is provided. The semiconductor device includes a transistor, a first strain layer and a second strain layer on a substrate. The first strain layer is configured at the periphery of the transistor. The second strain layer covers the transistor and a region exposed by the first strain layer. The stress provided by the second strain layer is different from that by the first strain layer. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8362562-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010244135-A1 |
| priorityDate |
2007-05-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |