| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0e433c1625fc509a087c912b440da84b |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76829
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B41J2-14129
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02211
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0217
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02115
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3146
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-75
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02304
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3185
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B41J2-14072 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-07
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-04 |
| filingDate |
2007-03-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2010-09-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1f5b3e3bc1924890cfaf361cc9b5d126
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0273a0fe2cd0e296db84f935a5be4205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7b53da2881d953e21accc66fc33cc6ae
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2d9290d676c67b0a90e042a77ac519f1 |
| publicationDate |
2010-09-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-7795070-B2 |
| titleOfInvention |
Semiconductor device including an amorphous nitrided silicon adhesion layer and method of manufacture therefor |
| abstract |
Provided is a method for manufacturing a semiconductor device. The method for manufacturing the semiconductor device, without limitation, includes forming a first semiconductor layer over a substrate, and forming a second semiconductor layer over the first semiconductor layer, wherein an amorphous nitrided silicon adhesion layer is located between and adheres the first and second semiconductor layers. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9299694-B2 |
| priorityDate |
2007-03-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |