| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_294881271413951a95f284b588a68e66 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-268
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1281
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02532
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02502
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02691
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02686
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02491
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02488
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1296 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-84
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-13
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-00 |
| filingDate |
2007-05-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2010-09-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_23d1735e9987d547f8729e853e6d32d4 |
| publicationDate |
2010-09-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-7790521-B2 |
| titleOfInvention |
Thin film semiconductor device, method of manufacturing the same and display |
| abstract |
A method of manufacturing a thin film semiconductor device is disclosed. The method includes the steps of: forming a light reflection and absorption layer for reflecting and absorbing light on a substrate; patterning the light reflection and absorption layer in a prescribed shape; forming an insulating film covering the patterned light reflection and absorption layer; forming a semiconductor thin film containing a polycrystalline grain on the insulating film; and laser annealing the semiconductor thin film by irradiating pulse oscillated laser light to crystallize the semiconductor thin film. The laser annealing step includes a heating process, and a cooling process. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2012231589-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8952368-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10153380-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8535994-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2013270538-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10170632-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11563124-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10763372-B2 |
| priorityDate |
2006-06-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |