| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4908
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-458
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1214
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1288
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66765
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-04 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-423
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-49
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-417
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-15
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-1345
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-1368 |
| filingDate |
2009-02-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2010-08-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e3fcf601d3c982647edb04227554ebd4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_78aa83dfb9454443017f3ff090b2314b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_75c6267d8c775da162e94c833c3742ac
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5b2671005bc7ce71dc85a1f4f9692e20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_aa07e0c99c24a951a9ae29a1ca0eb12f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b3fe79e6f4f03704344434a8a4f530f7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_21747acfb77b0d181ab4dff0d66658d4 |
| publicationDate |
2010-08-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-7786485-B2 |
| titleOfInvention |
Thin-film transistor and display device |
| abstract |
A thin-film transistor includes a pair of impurity semiconductor layers in which an impurity element imparting one conductivity type is added to form a source and drain regions so as to be overlapped at least partly with a gate electrode with a gate insulating layer interposed between the gate electrode and the impurity semiconductor layers; a pair of conductive layers which is overlapped over the gate insulating layers at least partly with the gate electrode and the impurity semiconductor layers, and is disposed with a space therebetween in a channel length direction; and an amorphous semiconductor layer which is in contact with the gate insulating layer and the pair of conductive layers and is extended between the pair of conductive layers. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7968880-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2013181222-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8618544-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9263594-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2009321743-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2009218568-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2009236600-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2009267068-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2009267067-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8513664-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2009233425-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8124972-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8624321-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8247315-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8049215-B2 |
| priorityDate |
2008-02-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |