| abstract |
A semiconductor device includes a capacitor having a bottom electrode, a dielectric layer formed on the bottom electrode, a top electrode formed on the dielectric layer, and a contact plug having a metal that is connected with the top electrode, wherein the top electrode includes a doped poly-Si 1-x Ge x layer and a doped polysilicon layer epitaxially deposited on the doped poly-Si 1-x Ge x layer and the contact plug makes a contact with the doped polysilicon layer. |