http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7745238-B2

Outgoing Links

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http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R31-26
filingDate 2008-02-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2010-06-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_363f9d42b211b1b677093bd3e2c48c8a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_25f8b8bc11982c3c20c1a72219fccde8
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publicationDate 2010-06-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-7745238-B2
titleOfInvention Monitoring of temperature variation across wafers during processing
abstract A method of measuring temperature across wafers during semiconductor processing includes the step of providing a correlation between a peak wafer temperature during a processing step and a change in wafer surface charge or surface potential following the processing step. A first wafer to be characterized for its peak temperature spatial distribution during the processing step is processed through the processing step. The wafer surface charge or surface potential at a plurality of locations on the first wafer are measured following the processing step. A peak temperature spatial distribution for the first wafer is then determined based on the correlation and the wafer surface charge or surface potential measured in the measuring step.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-106571320-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-106571320-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9779931-B2
priorityDate 2008-02-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 22.