| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_424db9d56b06a23aed410fcf5df652f3 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S430-111
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S430-121
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S430-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S430-123
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S430-122 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0035
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0397 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-004
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-30 |
| filingDate |
2008-02-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2010-06-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_80ef552c51996da668b98c65da511d09
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ea0add81bb44226ce3a7adcf9dd82631
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dfd817b3b4b7b6b42ab0ea6796adcec2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ddddaccdf289710274cfa74b079de7c8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3aa197a0faee499992f0da36115aa856
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_20359975dc1e11fd9df45be3e72e8fc1 |
| publicationDate |
2010-06-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-7741015-B2 |
| titleOfInvention |
Patterning process and resist composition |
| abstract |
A pattern is formed by applying a positive resist composition comprising a polymer comprising 7-oxanorbornane ring-bearing recurring units and acid labile group-bearing recurring units and an acid generator onto a substrate to form a resist film, heat treating and exposing the resist film to radiation, heat treating and developing the resist film with a developer, and causing the resist film to crosslink and cure with the aid of acid and/or heat. A second resist pattern is then formed in the space area of the first resist pattern. The double patterning process reduces the pitch between patterns to one half. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8003295-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2009087786-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8993222-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010159404-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8163466-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8507173-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2009286188-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8057982-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8198016-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8741548-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2009226843-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010209853-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2009053651-A1 |
| priorityDate |
2007-02-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |