http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7737047-B2
Outgoing Links
Predicate | Object |
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assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c3a2f00e72ba6e4c09b6da573427fbed |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31612 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3162 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02312 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3141 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45529 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76224 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45527 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-401 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02145 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-31 |
filingDate | 2006-08-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate | 2010-06-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8f4f43c83afb5b2a5737d5c9c26f2c44 |
publicationDate | 2010-06-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | US-7737047-B2 |
titleOfInvention | Semiconductor constructions, and methods of forming dielectric materials |
abstract | Some embodiments include methods of forming dielectric materials associated with semiconductor constructions. A semiconductor substrate surface having two different compositions may be exposed to a first silanol, then to organoaluminum to form a monolayer, and finally to a second silanol to form a dielectric material containing aluminum from the organoaluminum together with silicon and oxygen from the second silanol. Alternatively, or additionally, an organoaluminum monolayer may be formed across a semiconductor substrate, and then exposed to silanol within a deposition chamber, with the silanol being provided in two doses. Initially, a first dose of the silanol is injected the chamber, and then the first dose is flushed from the chamber to remove substantially all unreacted silanol from within the chamber. Subsequently, the second dose of silanol is injected into the chamber. Some embodiments include semiconductor constructions. |
isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9765429-B2 |
priorityDate | 2006-08-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 36.