http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7736530-B2
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_33c922e05f6133b7d72dbb849d77487d |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K3-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C11D7-22 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09G1-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3212 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K13-04 |
| filingDate | 2007-01-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2010-06-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6a24a7e37796da5eba50c074fa1d78bb http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d641c8b41ddb2afd7f0790a6ecea5515 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0c778329cca29f828c000ddb09cfcec4 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_255127c4b7348e8330078f480921fdf9 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6cc5e3b54b5d1b4461ea117b8cc68cbd |
| publicationDate | 2010-06-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | US-7736530-B2 |
| titleOfInvention | CMP slurry and method for polishing semiconductor wafer using the same |
| abstract | Disclosed is a CMP slurry in which a compound having a weight-average molecular weight of 30-500 and containing a hydroxyl group (OH), a carboxyl group (COOH), or both, is added to a CMP slurry comprising abrasive particles and water and having a first viscosity, so that the CMP slurry is controlled to have a second viscosity 5-30% lower than the first viscosity. Also disclosed is a method for polishing a semiconductor wafer using the CMP slurry. According to the disclosed invention, the agglomerated particle size of abrasive particles in the CMP slurry can be reduced, while the viscosity of the CMP slurry can be reduced and the global planarity of wafers upon polishing can be improved. Thus, the CMP slurry can be advantageously used in processes for manufacturing semiconductor devices requiring fine patterns and can improve the reliability and production of semiconductor devices through the use thereof in semiconductor processes. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011177623-A1 |
| priorityDate | 2006-01-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 90.