Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_da3b6ec3e3e092be5a8d375f17a6423b |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-5472 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-9607 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-96 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-656 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-77 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-421 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-72 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-3826 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-3821 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-722 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-5436 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B35-565 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C04B35-565 |
filingDate |
2007-10-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2010-06-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a7a7901c30252f303eef35c044718e10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_82135ed7c4b04ce93eac63df9a1a5c02 |
publicationDate |
2010-06-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-7727919-B2 |
titleOfInvention |
High resistivity silicon carbide |
abstract |
A recrystallized silicon carbide body is provided that has a resistivity of not less than about 1 E 5 Ω cm and a nitrogen content comprising nitrogen atoms bonded within the body, wherein the nitrogen content is not greater than about 200 ppm. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-106145954-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-106116614-A |
priorityDate |
2007-10-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |