| abstract |
A method of producing a semiconductor disk represented by a composition formula [(Bi 0.5 Na 0.5 ) x (Ba 1−y R y ) 1−x ]TiO 3 , in which R is at least one element of La, Dy, Eu, Gd and Y and x and y each satisfy 0≦x≦0.14, and 0.002≦y≦0.02 includes carrying out a sintering in an inert gas atmosphere with an oxygen concentration of 9 ppm to 1% and wherein a treatment at an elevated temperature in an oxidizing atmosphere after the sintering is not carried out. |