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publicationDate 2010-04-20-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-7700423-B2
titleOfInvention Process for manufacturing epitaxial wafers for integrated devices on a common compound semiconductor III-V wafer
abstract A method of fabricating an epitaxial compound semiconductor III-V wafer suitable for the subsequent fabrication of at least two different types of integrated active devices (such as an HBT and a FET) on such wafer by providing a substrate; growing a first epitaxial structure on the substrate; and growing a second epitaxial structure on the first epitaxial structure.
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