| abstract |
A method used during the manufacture of a semiconductor device comprises the formation of a first patterned layer having individual features of a first density. Through the formation and etching of various layers, for example conformal layers and a spun-on layer, a second patterned layer results which comprises individual features of a second density, which is about three times the first density. An in-process semiconductor apparatus formed using the method, and a system comprising the semiconductor apparatus formed according to the method, is also described. |