| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fb11c8dcf8ef9b6c8b9b8a3f73668310 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B41-43
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28518 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31144
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-665
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-105
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B99-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B69-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B43-30 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-4763 |
| filingDate |
2007-10-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2010-04-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f7200569cb495774caaf83ace782c0c0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0d8aebc69ef92751be513bc6d7988b6e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e87b96a22c219af0411630a620953279
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f0671bf8f4a87de5cad47bb6f31e2698
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0431af78ab5b0723447349447a07ccb7 |
| publicationDate |
2010-04-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-7691751-B2 |
| titleOfInvention |
Selective silicide formation using resist etchback |
| abstract |
Methods of selectively forming metal silicides on a memory device are provided. The methods can include forming a mask layer over the memory device; forming a patterned resist over the mask layer; removing upper portions of the patterned resist; forming a patterned mask layer by removing portions of the mask layer that are not covered by the patterned resist; and forming metal silicides on the memory device by a chemical reaction of a metal layer formed on the memory device with portions of the memory device that are not covered by the patterned mask layer. By preventing silicidation of underlying silicon containing layers/components of the memory device that are covered by the patterned mask layer, the methods can selectively form the metal silicides on the desired portions of the memory device. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8803243-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9082877-B2 |
| priorityDate |
2007-10-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |