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filingDate 2008-06-10-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2010-03-23-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cecdf8643c0e8f058a3b31a46f294436
publicationDate 2010-03-23-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-7682865-B2
titleOfInvention Superlattice photodiodes with polyimide surface passivation
abstract The subject invention comprises the realization of a superlattice photodiode with polyimide surface passivation. Effective surface passivation of type-II InAs/GaSb superlattice photodiodes with cutoff wavelengths in the long-wavelength infrared is presented. A stable passivation layer, the electrical properties of which do not change as a function of the ambient environment, nor time, can be realized by a solvent-based surface preparation, vacuum desorption, and the application of an insulating polyimide layer.
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