http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7674389-B2
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_2a819eda0adf22936a52362eeebb9fb4 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S977-856 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-317 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S977-90 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S977-888 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-317 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y30-00 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B23K15-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B82B3-00 |
| filingDate | 2005-10-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2010-03-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ce218e4d3bbf927cce1237d348e6a73c http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d8b62b98faa2f20c087c639703c74049 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b7d2d7fbb6aea4dae28cc59e025f2102 |
| publicationDate | 2010-03-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | US-7674389-B2 |
| titleOfInvention | Precision shape modification of nanodevices with a low-energy electron beam |
| abstract | Methods of shape modifying a nanodevice by contacting it with a low-energy focused electron beam are disclosed here. In one embodiment, a nanodevice may be permanently reformed to a different geometry through an application of a deforming force and a low-energy focused electron beam. With the addition of an assist gas, material may be removed from the nanodevice through application of the low-energy focused electron beam. The independent methods of shape modification and material removal may be used either individually or simultaneously. Precision cuts with accuracies as high as 10 nm may be achieved through the use of precision low-energy Scanning Electron Microscope scan beams. These methods may be used in an automated system to produce nanodevices of very precise dimensions. These methods may be used to produce nanodevices of carbon-based, silicon-based, or other compositions by varying the assist gas. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8314357-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010282734-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2014126482-A2 |
| priorityDate | 2004-10-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 45.