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publicationDate 2010-01-12-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-7645707-B2
titleOfInvention Etch profile control
abstract A method for etching a dielectric layer over a substrate and disposed below a mask is provided. The substrate is placed in a plasma processing chamber. An etchant gas comprising O 2 and a sulfur component gas comprising at least one of H 2 S and a compound containing at least one carbon sulfur bond is provided into the plasma chamber. A plasma is formed from the etchant gas. Features are etched into the etch layer through the photoresist mask with the plasma from the etchant gas.
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