http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7641937-B2
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_508ff7db697b8e1bc2308b2ac6c27713 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-541 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02P70-50 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-305 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-0322 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-032 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0256 |
| filingDate | 2004-05-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2010-01-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f4f32d0228aaa7940c9bd1428f101419 |
| publicationDate | 2010-01-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | US-7641937-B2 |
| titleOfInvention | Method for manufacturing absorber layers for solar cell |
| abstract | The present invention relates to a process for producing CuInSe 2 and CuIn 1X Ga,Se 2 thin films used as an absorption layer for a solar cell such that they have a structure near to chemical equivalence ratio. The present invention provides a process for producing a thin film for a solar cell, comprising forming an InSe thin film on a substrate by Metal Organic Chemical Vapor Deposition using a [Me2In-(μSeMe)] 2 precursor; forming a Cu 2 Se thin film on the InSe thin film by Metal Organic Chemical Vapor Deposition using a (hfac)Cu(DMB) precursor, and forming a CuInSe 2 thin film on the Cu 2 Se thin film by Metal Organic Chemical Vapor Deposition using a [Me 2 In-(μSeMe)] 2 precursor. Further, the process may further comprise forming a CuIn 1 ,Ga,Se 2 thin film on the CuInSe 2 thin film by Metal Organic Chemical Vapor Deposition using a [Me2Ga-(μSeMe)] 2 precursor. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9246086-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7964418-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2008041439-A1 |
| priorityDate | 2003-07-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 32.